Method of producing a light-emitting arrangement

ABSTRACT

A method of producing a light-emitting arrangement includes providing a carrier including a top side, attaching a multitude of first conversion elements on the top side of the carrier, wherein the first conversion elements are arranged in a lateral direction spaced apart from one another, attaching an encapsulation on the top side of the carrier, wherein the encapsulation covers the carrier and the first conversion elements at least sectionally, removing the encapsulation in regions between the first conversion elements, and attaching optoelectronic semiconductor chips between the first conversion elements.

TECHNICAL FIELD

This disclosure relates to a method of producing a light-emittingarrangement.

BACKGROUND

U.S. Pat. No. 7,151,283 describes a light-emitting arrangement. However,there is a need to provide a light-emitting arrangement having aparticularly long life and a light-emitting arrangement that can beproduced in a particularly simple manner.

SUMMARY

We provide a light-emitting arrangement including a radiation-emittingsemiconductor chip that, during operation, emits primary radiation atleast from a main emission surface, a first conversion element thatabsorbs part of the primary radiation and emits secondary radiation, anda deflection element that causes a direction change for part of theprimary radiation, wherein the first conversion element is arranged in alateral direction next to the radiation-emitting semiconductor chip, thedeflection element guides part of the primary radiation onto the firstconversion element, and the light-emitting arrangement, in operation,emits mixed light including the primary radiation and the secondaryradiation.

We also provide a method of producing a light-emitting arrangement,including providing a carrier including a top side, attaching amultitude of first conversion elements on the top side of the carrier,wherein the first conversion elements are arranged in a lateraldirection spaced apart from one another, attaching an encapsulation onthe top side of the carrier, wherein the encapsulation covers thecarrier and the first conversion elements at least sectionally, removingthe encapsulation in regions between the first conversion elements, andattaching optoelectronic semiconductor chips between the firstconversion elements.

We further provide a light-emitting arrangement including a plurality ofradiation- emitting semiconductor chips that, during operation, eachemit primary radiation at least from a main emission surface, a firstconversion element that absorbs part of the primary radiation and emitssecondary radiation, and a deflection element that causes a directionchange for part of the primary radiation, wherein the radiation-emittingsemiconductor chips are arranged along a virtual line, the firstconversion element is arranged in a lateral direction next to theradiation- emitting semiconductor chip, the first conversion element hasa strip shape, the first conversion element is arranged parallel to andon both sides of the virtual line, the deflection element guides part ofthe primary radiation onto the first conversion element, and thelight-emitting arrangement, in operation, emits mixed light includingthe primary radiation and the secondary radiation.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1, 2A, 2B are schematic illustrations showing examples oflight-emitting arrangements described herein.

FIGS. 3A through 3D are schematic illustrations further showing anexample of the method described herein.

FIGS. 4A through 4C are schematic illustrations further showing anotherexample of a method described herein.

FIG. 5 further shows the use of a light-emitting arrangement describedherein.

LIST OF REFERENCE NUMERALS

1 carrier

2 first conversion element

3 semiconductor body

4 second conversion element

5 semiconductor chip

51 main emission surface

6 primary radiation

7 secondary radiation

8 mixed light

9 deflection element

91 particles scattering radiation

92 matrix material

10 encapsulation

11 virtual line

12 frame

13 reflector

14 light guide

DETAILED DESCRIPTION

Our light-emitting arrangement may comprise a radiation-emittingsemiconductor chip. The radiation-emitting semiconductor chip is aluminescence diode chip such as a light-emitting diode chip or a laserdiode chip, for example. During operation, the radiation-emittingsemiconductor chip emits primary radiation that may be in the wavelength range from ultraviolet radiation to green light, for example. Tothat end, the radiation-emitting semiconductor chip comprises a mainemission surface through which a major part, i.e. at least 50% of theemitted radiation exits from the radiation-emitting semiconductor chip.The main emission surface is formed by a cover surface of theradiation-emitting semiconductor chip, for example.

The arrangement may comprise a first conversion element that absorbspart of the primary radiation and emits secondary radiation. Thesecondary radiation has a lower energy than the primary radiation, forexample. The conversion element may comprise exactly one type ofphosphor or two or more types of phosphor. If the conversion elementcomprises two or more types of phosphor, the secondary radiation maytherefore contain different peak wavelengths and thus different spectra.

The light-emitting arrangement may comprise a deflection element thatbrings about a direction change for at least part of the primaryradiation. The direction change may be effected by scattering and/orrefracting and/or reflecting the primary radiation. Preferably, thedeflection element is arranged following the optoelectronicsemiconductor chip such that a major part, i.e. at least 50%, or theentire primary radiation emitted by the semiconductor chip duringoperation through the main emission surface impinges the deflectionelement. At least part of the electromagnetic radiation is influenced bythe deflection element by a direction change. The deflection elementdeflects the electromagnetic radiation, particularly in a targetedmanner. That is, the deflected electromagnetic radiation does notconstitute undesired scattered light, but rather the deflection elementis adapted to deflect part of the electromagnetic radiation in atargeted manner.

The first conversion element may be arranged next to theradiation-emitting semiconductor chip in a lateral direction. Thelateral direction runs parallel to the main emission surface of theradiation-emitting semiconductor chip, for example. In other words, thefirst conversion element is arranged next to the radiation-emittingsemiconductor chip and is particularly not arranged on the main emissionsurface of the chip. It is possible that the first conversion elementand the radiation emitting semiconductor chip are arranged in anoncontact manner to one another, thus particularly not being in directcontact to one another. A reflecting element or a reflecting layer maybe arranged between them, for example. However, it is also possible forthe first conversion element to directly adjoin a side surface of theradiation-emitting semiconductor chip running perpendicularly ortransversely to the main emission surface.

The deflection element may guide part of the primary radiation onto thefirst conversion element. Guidance of the primary radiation may be atleast effected by a one-time reflection, scattering and/or refraction ofthe primary radiation through the deflection element. In particular, theprimary radiation does not enter the first conversion element directlyfrom the radiation-emitting semiconductor chip, but rather the firstconversion element is arranged next to the radiation emittingsemiconductor chip so that at least part of the primary radiationinitially enters and/or impinges the deflection element before the firstconversion element is reached. That is, material of the first conversionelement, e.g. a sensitive conversion substance, is not directlyilluminated by the primary radiation, but the primary radiation impingesthe material of the first conversion element only after being deflectedin advance.

The deflection element preferably guides at least 25%, particularlypreferably at least 50% of the electromagnetic primary radiation emittedby the semiconductor chip during operation onto the first conversionelement. That is, in particular, at least 25% or at least 50% of theprimary radiation impinges the first conversion element.

The light-emitting arrangement may emit mixed light comprising theprimary radiation and the secondary radiation during operation. Themixed light may comprise further radiation parts that may originate fromfurther conversion elements and/or further radiation- emittingsemiconductor chips. However, the mixed light contains the primaryradiation of the radiation-emitting semiconductor chip and the secondaryradiation of the first conversion element.

The light emitting arrangement may comprise a radiation-emittingsemiconductor chip which, during operation, emits primary radiation atleast on a main emission surface, a first conversion element, thatabsorbs part of the primary radiation and emits secondary radiation, adeflection element, that brings about a direction change for at leastpart of the primary radiation, wherein the first conversion element isarranged in a lateral direction next to the radiation- emittingsemiconductor chip, the deflection element guides part of the primaryradiation onto the first conversion element and the light-emittingarrangement, during operation, emits mixed light comprising the primaryradiation and the secondary radiation.

The light-emitting arrangement is based upon the followingconsiderations: Radiation- sensitive or temperature-sensitive conversionmaterials that may be rapidly aging due to temperature or humidity thatis too high, or conversion materials that, embedded in a matrix materialsuch as silicone, only exhibit low efficiency can often times not beused in light- emitting arrangements due to the limitations describedabove. In our light-emitting arrangement, the first conversion materialis laterally arranged next to the radiation-emitting semiconductor chip,which generates primary radiation. As a result, the luminance (density)of the occurring primary radiation can be reduced since the radiationmay be distributed over a larger area than would be the case if theconversion element directly followed the semiconductor chip at the mainemission surface thereof. Further, the first conversion element can bearranged on a well heat- conductive carrier together with thesemiconductor chip, which allows improved heat dissipation of the heatgenerated during operation. There is no need for the first conversionelement to be introduced into a matrix material, it may rather bedirectly attached to the carrier, for example. Further, encapsulation ofthe first conversion element may be provided, which may protect theconversion element against atmospheric gas and humidity withoutnegatively influencing the dissipation of heat generated by thesemiconductor chip during operation. Furthermore, the light-emittingarrangement described herein allows using silicone matrix materials thatare more sensitive to temperature and/or radiation, which materials maybe adjusted to the used phosphors in a better way. For example, thematrix materials may be adjusted to the used phosphors in a better wayin terms of optical properties such as regarding the refractive index,and/or chemical properties.

Thus, a light-emitting arrangement described herein allows improved heatdissipation, light spreading and thus a reduction of the light-emittingdiode of the primary radiation impinging the first conversion elementand the possibility to encapsulate the first conversion element. As aresult, even sensible converter materials may be used for the conversionelement, which may be advantageous with regard to radiationcharacteristics, namely the wavelengths of the secondary radiation andtheir distribution with regard to their prices or with regard to theirefficiency. As a result, despite using sensible converter materials, thelight-emitting arrangement has a particularly long life.

The main emission surface of the semiconductor chip may be free ofmaterial of the first conversion element. That is, the first conversionelement does not overlap and/or cover the main emission surface of thesemiconductor chip. In particular, it is possible that the firstconversion element and the semiconductor chip do not have any directcontact to one another in any location. This makes it possible that onlydeflected electromagnetic radiation that received a direction change bythe deflection element is capable of impinging the first conversionelement. In particular, the first conversion element is not directlyradiated by the electromagnetic radiation of the semiconductor chip.

The semiconductor chip may comprise a second conversion element arrangedfollowing a semiconductor body of the semiconductor chip.Electromagnetic radiation is generated in the semiconductor body of thesemiconductor chip by electric pumping, for example. In the secondconversion element, radiation is generated by conversion and/or opticalpumping. The primary radiation emitted by the semiconductor chip mayhave portions that have been generated directly in the semiconductorbody and portions that have been generated in the second conversionelement. In this case, the main emission surface of the semiconductorchip is formed by a region of the second conversion element, the regionfacing away from the semiconductor body. The second conversion elementmay comprise exactly one type of phosphor or two or more types ofphosphor. If the second conversion element comprises two or more typesof phosphor, the converted radiation may contain different peakwavelengths and thus different spectra.

For example, the second conversion element may cover the emissionsurface of the semiconductor body at least in some places so thatelectromagnetic radiation generated in the semiconductor body enters thesecond conversion element directly from the semiconductor body. At leastone type of phosphor is used in the second conversion element, thephosphor not being contained in the first conversion element.

In other words, the first and the second conversion element may bedifferent from one another particularly in terms of the phosphors used.For example, phosphors may be used for the second conversion elementthat have a higher resistance in terms of temperature and/or humidity.Sensible phosphors emitting electromagnetic radiation of a wavelengthrange different than that of the second conversion element may bearranged laterally next to the semiconductor chip spaced apart from thelatter.

The deflection element may cover the semiconductor chip and the firstconversion element at least in some places. For example, it is possiblefor the deflection element to completely cover the semiconductor chipand the first conversion element at their exposed outer surfaces. Inthis case, the deflection element may be in direct contact with thesemiconductor chip and/or the first conversion element at least in someplaces so that the deflection element covers the semiconductor chipand/or the first conversion element at least in some places.

The deflection element may particularly comprise a light-scatteringbody. For example, the deflection element is formed with a matrixmaterial with particles of a light- scattering, light-refracting and/orlight-reflecting material being introduced therein. The deflectionelement may then be arranged following the semiconductor chip and thefirst conversion element by a potting process so that the two componentsare potted in the deflection element.

The light-emitting arrangement may comprise a carrier on the top side ofwhich the semiconductor chip and the first conversion element arearranged. The carrier may be a connection carrier, via which thesemiconductor chip can be electrically contacted. The carrier maycomprise a reflector, which in some places is formed on the top side ofthe carrier. In this case, the carrier is configured to reflect theprimary radiation and the secondary radiation in places where it iscovered by the first conversion element.

The carrier is suitable for dissipating heat generated in thesemiconductor chip and in the conversion element during operation.Preferably, the semiconductor chip and the first conversion elementconnect to the carrier in a well heat-conductive manner. For example,the first conversion element may in some places directly adjoin theconversion element. The optoelectronic semiconductor chip may connect tothe carrier via a thermally well-conductive brazing material or athermally well-conductive adhesive.

The first conversion element may be covered by an encapsulation on itsexternal surface at least sectionally, the encapsulation being permeablefor primary radiation and secondary radiation. In this case,particularly the entire exposed external surface of the first conversionelement, i.e., for example, the part of the external surface not coveredby the carrier may be covered by the encapsulation. The encapsulationinhibits or prevents penetration of humidity and/or atmospheric gasesinto the first conversion element. The encapsulation can e.g. beproduced by ALD (Atomic Layer Deposition). For example, theencapsulation may comprise materials such as Al₂O₃, TiO₂ and/or ZrO₂ asmonolayers or as part of layer sequences. Furthermore, it is possiblethat the encapsulation comprises Parylene.

Particularly, the encapsulation with Parylene has proven to beparticularly advantageous since the encapsulation may be effected evenat room temperature. An encapsulation comprising Parylene or consistingof Parylene preferably has a thickness of at least 20 μm. In this case,encapsulation may comprise different types of Parylene that may bedifferent from one another in terms of their optical refractive index,for example. The encapsulation may then be formed by a Parylene layersequence, for example, in which the refractive index gradually changes.For example, this allows for an adjustment of the refractive indexbetween the material of the first conversion element and air. Parylenemay be applied in layers, e.g. of at least 20 μm, for example, 25 μm,thereby presenting a humidity barrier and effective protection againstcorrosion of the first conversion element. Parylene is characterized byits good adhesion on various materials and its good transparence forlight of greater than 95%. Particularly Parylene D is suitable in thecase of an encapsulation with Parylene and for long-term exposure totemperature below 150° C. and outside the primary radiation, theParylene D having the following structural formula:

with X═H, R₁═Cl, R₂ H, R₃═Cl and R₄═H. Parylene D has a refractive indexof at least 1.65 for visible light. Furthermore, Parylene D istemperature-stable up to 150 ° C. in continuous operation.

Parylene can be processed at room temperature under vacuum and is freeof micro pores and pinholes as from a layer thickness of 2 μm.

Furthermore, Parylene has a good adhesion, particularly on metals suchas nickel, gold, copper, silver and aluminum. Parylene F is particularlysuitable for applications in which especially high temperatures arereached and in which the Parylene is located in the optical path of theradiation, for example.

The encapsulation may adjoin the carrier and the first conversionelement in some places. This way, the encapsulation is capable ofprotecting the first conversion element in a particularly well manneragainst humidity and/or atmospheric gas since the first conversionelement is covered by the encapsulation even in the region of thecontact between the first conversion element and the carrier.

The encapsulation may directly adjoin the deflection element in someplaces. If the deflection element is a scattering body, for example,formed by application techniques such as potting or pressing, theencapsulation may directly adjoin the deflection element. Theencapsulation may then also serve to adjust the refractive index betweenthe first conversion element and the deflection element.

The arrangement may comprise a multitude of optoelectronic semiconductorchips. The optoelectronic semiconductor chips may be optoelectronicsemiconductor chips of the same type, for example. The optoelectronicsemiconductor chips may be arranged particularly along a virtual line,for example, a straight line. In this case, the conversion element ispreferably parallel and arranged on both sides of the virtual line. Thatis, the semiconductor chips may be arranged in the type of a strip alonga virtual straight line. In this case, the first conversion element isalso formed by a strip, for example, the strip being arranged on bothsides next to the strip of the radiation-emitting semiconductor chip.Such a light-emitting arrangement is particularly suitable for couplingmixed light generated by the light-emitting arrangement into the lightguides of display devices or surface light sources.

In the light-emitting arrangements described herein, particularlysensible conversion materials such as so-called quantum dot converters,organic converters, sulfides and/or Sr-containing CaAlSiN-converters maybe used. In particular quantum dot converters may be applied as a foilor potted directly onto the carrier. The quantum-dot converters may bearranged in small polymer beads having grain sizes of preferably lessthan 20 μm or be potted or embedded as such beads. Scattered particlesmay be present within the beads.

Silicone as matrix material may be used to form the deflection element,with inorganic particles for the scattering of light being introducedtherein. Particles made of SiO₂ and/or Al₂O₃ in small concentrationsbetween at least 0.05 wt% and at most 0.3 wt %, for example, 0.2 wt %are particularly suitable to that end. The particles are characterizedby small d50 diameters measured in Q3 from at least 0.3 μm, preferablyat least 0.5 μm, to at most 1μm. The refractive index of the fillerparticles is preferably selected such that it deviates by at most+/−0.05 from the refractive index of the matrix material, e.g. silicone.

A method of producing a light-emitting arrangement is provided. Thelight-emitting arrangement described herein can be produced by themethod. That is, all features disclosed for the arrangement aredisclosed for the method and vice versa. For example, a method describedherein comprises the following steps:

First, a carrier is provided, the carrier having a top side. Forexample, the carrier may have a reflector on its top side and beconfigured to reflect in this way or the carrier is formed with areflecting material. In particular, the carrier may be a connectioncarrier or a composite of connection carriers, via which optoelectronicsemiconductor chips can be contacted.

A multitude of first conversion elements is attached on the carrier in astructured manner, wherein the first conversion elements are arrangedspaced apart from one another in a lateral direction running parallel toa main extension direction of the carrier, for example. For example, theconversion elements may be attached to be spaced apart from one anotherby a masking technique or the conversion elements are structuredcorrespondingly from an interconnected layer by a photo technology, forexample. Furthermore, it is possible to adhere prefabricatedstrip-shaped conversion elements.

After that, an encapsulation is applied or attached to the top side ofthe carrier onto the exposed external surface of the carrier and theexposed external surface of the first conversion elements, the surfacenot facing the carrier. The encapsulation covers the carrier and thefirst conversion elements at least sectionally, preferably in each casecompletely on the exposed external surfaces thereof

In a further method step, the encapsulation is removed in regionsbetween the first conversion elements. This may in turn be effected bythe masking technique.

In another method step, an optoelectronic semiconductor chip is in eachcase attached between the first conversion elements so that at least oneoptoelectronic semiconductor chip is arranged between two adjacentconversion elements on the carrier.

In this case, attaching the optoelectronic semiconductor chips can alsobe performed before attaching the multitude of first conversionelements. This way, a soldering technique can be used to attach thesemiconductor chips, which requires higher temperatures than thetemperature sensibility of the phosphor(s) in the first conversionelement.

Alternatively, the method is performed in the order mentioned above,wherein a conductive adhesive can be used to apply, mechanically attachand electrically contact the optoelectronic semiconductor chips.

Individualization of a multitude of light-emitting arrangements may beperformed, wherein each arrangement comprises at least one firstconversion element and at least one optoelectronic semiconductor chip.Individualization can be performed or effected at least through thecarrier. Furthermore, it is possible that even the deflection element,if formed as a scattering potting compound, for example, is cut throughduring individualization.

In the following, the light-emitting arrangements as well as the methodsdescribed herein are described by examples and the related figures.

Equal, equivalent or similar elements are provided with the samereference numerals in the Figures. The Figures and dimensions of theelements illustrated in the Figures amongst one another are not to beconsidered as true to scale. Rather, individual elements can beillustrated in an exaggerated size for better illustration and/orunderstanding.

FIG. 1 shows an example of a light-emitting arrangement describedherein. The light- emitting arrangement comprises a carrier 1. Forexample, the carrier 1 is a connection carrier, for example, a printedcircuit board.

The semiconductor chip 5 is arranged on the carrier 1. The semiconductorchip 5 comprises a semiconductor body 3 in which electromagneticradiation is generated by current feed.

Furthermore, the semiconductor chip 5 optionally comprises a secondconversion element 4 that may directly adjoin or be adjacent to thesemiconductor body 3.

Primary radiation 6 is emitted by the semiconductor chip 5, theradiation being green light or blue-green mixed light, for example. Theprimary radiation 6 impinges the deflection element 9, which changes thedirection of the primary radiation to some extent such that part of theprimary radiation impinges a first conversion element 2 arrangedlaterally next to the optoelectronic semiconductor chip 5 on the carrier1.

The deflection element 9 is formed as a scattering potting compoundcomprising a matrix material 92, for example, silicone withlight-scattering particles 91, for example, made of aluminum oxide,being introduced therein in a low concentration. The deflection element9 covers the free external surfaces of the first conversion elements 2and of the radiation-emitting semiconductor chip 5 entirely, thesurfaces facing away from the carrier.

The primary radiation 6 impinging the second conversion element 4 ispartially converted into secondary radiation 7 so that mixed radiation 8composed of primary radiation 6 and secondary radiation 7 exits thelight-emitting arrangement through the deflection element 9. Thedeflection element 9 also ensures a mixing of primary radiation 6 andsecondary radiation 7.

In the example of FIG. 1, the deflection element 9 comprises alens-shaped curvature.

In conjunction to FIGS. 2A and 2B, another example of the light-emittingarrangement described herein is explained in further detail. In thisexample, a reflector 13 is attached at least on the top side of thecarrier 1, the reflector being a metallic reflecting layer, for example.At least the first conversion element 2 is attached on the reflectinglayer, i.e. the reflector 13. The conversion element 2 and theoptoelectronic semiconductor chip 5 are surrounded by a frame 12 thatmay be configured to be reflective for the primary radiation 6 and thesecondary radiation 7. The primary radiation 6 exits the semiconductorchip 5 through the main emission surface 51 thereof, for example, andwill at least partially impinge the first conversion element 2 in amanner deflected by the deflection element 9.

Furthermore, it is possible that the carrier 1 per se has a reflectivedesign and consists of a ceramic, for example, white, material, forexample. In this case, arranging another reflector on the top side ofthe carrier 1 can be omitted. The reflector 13 is rather formed by theexternal surface of the carrier 1.

The deflection element 9 may in turn be formed as a scattering pottingcompound that is laterally bounded by the frame 12.

FIG. 2B shows a plan view of the example of the light-emittingarrangement shown in the sectional illustration of FIG. 2A. As can beseen from FIG. 2B, the radiation-emitting semiconductor chips 5 arearranged along a virtual line 11, in this case a straight line. Firstconversion elements 2 are arranged as strips on both sides of thesemiconductor chips 5, and parallel to the straight line 11.

Such a light-emitting arrangement is suitable for coupling light into alight guide 14, for example, as illustrated in the schematicillustration of FIG. 5. Such a light guide 14 can be used as a surfacelight source in general lighting systems or in a display apparatus asbackground lighting device.

In the example of FIGS. 2A and 2B, the first conversion element 2 mayparticularly be a foil, the foil comprising quantum dots as a phosphor,wherein the foil has a length that may correspond to the edge length ofthe light guide 14.

With reference to FIGS. 3A to 3B, a first example of a method describedherein is described in greater detail by schematic views. First, acarrier 1 is provided in the method, a semiconductor body 3 of thesemiconductor chip 5 that can be electrically pumped and a ring 12 beingarranged on the top side of the carrier 1, the ring 12 surrounding thesemiconductor body 3. The region around the semiconductor body 3 insidethe ring 12 is subsequently filled with material of the first conversionelement 2 to form the first conversion element 2. This is illustrated inFIG. 3B.

FIG. 3C shows that a second conversion element 4 can be arrangedfollowing the semiconductor body 3, the element 4 covering the exposedexternal surface of the semiconductor body 3.

In the final method step, the deflection element 9 is attached over theradiation- emitting semiconductor chip 5 and the first conversionelement 2. For example, the deflection element 9 is a potting compoundor a lens comprising a matrix material and light-scattering particles.

With reference to FIGS. 4A to 4C, another example of a method describedherein is explained in further detail. First, first conversion elements2 are attached to be spaced apart from one another in a lateraldirection, parallel to the main extension direction of the carrier 1 ona reflecting carrier 1. The reflecting carrier 1 may be formed ofaluminum, for example.

In the next method step, shown in FIG. 4B, attachment of theencapsulation 10 ensues, which may be formed by a laminate, by Paryleneand/or inorganic materials applied or attached by atomic layerdeposition (ALD). The encapsulation 10 covers the top side of thecarrier and the exposed external surface of the first conversion element2 entirely. The first conversion elements 2 may contain quantum dots,for example, which may be introduced in beads of a polymer material.

In the next method step, the potting compound 10 is removed in someplaces and the semiconductor chips 5 are attached. Further, thearrangement is potted with material of the deflection element 9, forexample.

Finally, the light-emitting arrangements may be individualized intoindividual arrangements, which in each case comprise one optoelectronicsemiconductor chip, for example.

The method described herein allows producing the light-emittingarrangements described herein, which are characterized by a long life,in a particularly cost-effective manner.

This application claims priority of DE 102014100991.6, the subjectmatter of which is incorporated herein by reference.

Our arrangements and methods are not limited by the description withrespect to the examples. This disclosure rather comprises any newfeature as well as any combination of features that particularlyincludes any combination of features in the appended claims, even if thefeature or combination of features per se is not explicitly indicated inthe claims or the examples.

What is claimed is:
 1. A method of producing a light-emittingarrangement, comprising: providing a carrier comprising a top side,attaching a multitude of first conversion elements on the top side ofthe carrier, wherein the first conversion elements are arranged in alateral direction spaced apart from one another, attaching anencapsulation on the top side of the carrier, wherein the encapsulationcovers the carrier and the first conversion elements at leastsectionally, removing the encapsulation in regions between the firstconversion elements, and attaching optoelectronic semiconductor chipsbetween the first conversion elements.
 2. The method according to claim1, further comprising individualizing into a multitude of light-emittingarrangements, wherein each arrangement comprises at least a firstconversion element and at least one optoelectronic semiconductor chip.3. The method according to claim 1, wherein each optoelectronicsemiconductor chip is placed in a region between first conversionelements from which the encapsulation has been removed.
 4. The methodaccording to claim 1, wherein a main emission surface of eachsemiconductor chip is not covered and/or overlapped by material of thefirst conversion element and the main emission surface is free ofmaterial of the first conversion element.
 5. The method according toclaim 1, wherein second conversion elements are arranged following asemiconductor body of each semiconductor chip, a main emission surfaceof each semiconductor chip is formed by a region of one of the secondconversion elements, and each second conversion element comprises atleast one phosphor that is not a constituent of the first conversionelement.
 6. The method according to claim 1, wherein the encapsulationcomprises Parylene.
 7. The method according to claim 1, wherein theencapsulation has a thickness of at least 20 μm.
 8. The method accordingto claim 1, wherein the encapsulation directly adjoins the carrier andthe first conversion elements in some places.
 9. The method according toclaim 1, wherein the optoelectronic semiconductor chips are arrangedalong a virtual line, wherein the first conversion elements are arrangedparallel to and on both sides of the virtual line.
 10. The methodaccording to claim 1, wherein the first conversion elements comprisequantum dot converters.
 11. The method according to claim 1, wherein thefirst conversion elements comprise organic converters.
 12. The methodaccording to claim 1, wherein the first conversion elements comprise atleast one of sulfides and Sr-containing CaAlSiN-converters.
 13. Themethod according to claim 1, wherein the first conversion elementscontain quantum dots introduced in beads of a polymer material.
 14. Themethod according to claim 1, wherein the encapsulation is attached byatomic layer deposition.
 15. The method according to claim 1, wherein,before removing the encapsulation in regions between the firstconversion elements, the encapsulation covers the carrier and the firstconversion elements completely.